Product Profile of Igbt Rectifier [Insulated-Gate Bipolar Transistor Rectifier]

IGBT Rectifier is a three-terminal power semiconductor device which is primarily used as an electronic switch that can combine high efficiency and fast switching. The Rectifier switches electric power in many modern appliances such as variable-frequency drives, electric cars, trains, variable speed refrigerators, lamp ballasts, air-conditioners and even stereo systems with switching amplifiers. IGBT Rectifier combines the simple gate-drive characteristics of MOSFETs with the high-current and low-saturation-voltage capability of bipolar transistors.IGBT Rectifier also combines an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device and is used in medium to high-power applications like switched-mode power supplies, traction motor control and induction heating.

LEE Industry offers Insulated-Gate Bipolar Transistor Rectifier. LEE Industry is the supplier and manufacturer of IGBT Rectifier . Types of IGBT Rectifiers are air cooling and water cooling.

LEE Industry with its head office located in Koparkhairane, Mumbai is headed by Mr. Nikesh Deshmukh the Proprietor of the organization. The company ensure supply of defect free products within stipulated time.It is under his leadership and guidance that the company has achieved their goals successful. His hard work and dedication has led the company to excel in their respective fields.

Key Features of Igbt Rectifier [Insulated-Gate Bipolar Transistor Rectifier]

• IGBT Rectifier is a three-terminal power semiconductor device which is primarily used as an electronic switch that can combine high efficiency and fast switching
• Switches electric power in many modern appliances such as variable-frequency drives, electric cars, trains, variable speed refrigerators, lamp ballasts, air-conditioners and even stereo systems with switching amplifiers
• As it is designed to turn on and off rapidly, amplifiers that use it often synthesize complex waveforms with pulse width modulation and low-pass filters
• Combines the simple gate-drive characteristics of MOSFETs with the high-current and low-saturation-voltage capability of bipolar transistors
• Combines an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device
• is used in medium to high-power applications like switched-mode power supplies, traction motor control and induction heating
• Large IGBT modules typically consist of many devices in parallel and can have very high current handling capabilities in the order of hundreds of amperes with blocking voltages of 6000 V, equating to hundreds of kilowatts.