Product Profile of Silicon Germanium Carbon Bipolar RF Transistor
Silicon Germanium Carbon Bipolar RF Transistor is ideal for portable battery-powered applications in which reduced power consumption is a key requirement. The Bipolar RF Transistor is fitted with internal protection circuits, which enhance robustness against ESD and high RF input power strongly. Germanium Carbon Bipolar RF Transistor is designed in such a way that supports collector voltages up to 4.1 V. Silicon Germanium Carbon Bipolar RF Transistor is ideal for mobile, portable and fixed connectivity applications.
Applications of Silicon Germanium Carbon Bipolar RF Transistor:
- Mobile, portable and fixed connectivity applications: WLAN 802.11a/b/g/n, WiMax 2.5 / 3.5 / 5GHz, UWB, Bluetooth
- Satellite communication systems: Navigation systems [GPS, Glonass], satellite radio [SDARs, DAB] and C-band LNB
- Multimedia applications such as mobile/portable TV, CATV, FM radio
- 3G/4G UMTS/LTE mobile phone applications
- ISM applications like RKE, AMR and Zigbee, as well as for emerging wireless applications
- As discrete active mixer, amplifier in VCOs and buffer amplifier
Key Features of Silicon Germanium Carbon Bipolar RF Transistor
- Fitted with internal protection circuits, which enhance robustness against ESD and high RF input power strongly
- High RF gain
- Lowest noise figure at low operation current for use in a wide range of wireless applications
- Ideal for portable battery-powered applications in which reduced power consumption is a key requirement
- Device design supports collector voltages up to 4.1 V
- Robust high performance low noise amplifier based on Infineon´s reliable, high volume SiGe:C wafer technology
- 2 kV ESD robustness (HBM) due to integrated protection circuits
- High maximum RF input power of 21 dBm
- 0.65 dB minimum noise figure typical at 1.5 GHz, 0.7 dB at 2.4 GHz, 6 mA
- 26.5 dB maximum gain Gms typical at 1.5 GHz, 23 dB at 2.4 GHz, 30 mA
- 27 dBm OIP3 typical at 2.4 GHz, 30 mA
