Product Profile of NPN Silicon Germanium RF Transistor

NPN Silicon Germanium RF Transistor is apt for 1.9 GHz cordless phones and transmitter driver amplifier. The NPN Silicon Germanium RF Transistor is ideal for low phase noise oscillators. The NPN Silicon RF Transistor utilises 70 GHz fT- silicon germanium technology. NPN Silicon Germanium RF Transistor is suitable for medium power amplifiers and driver stages.

Applications of NPN Silicon Germanium RF Transistor:

• Driver amplifier

• ISM bands 434 and 868 MHz

• 1.9 GHz cordless phones

• CATV LNA

• Transmitter driver amplifier

• 2.4 GHz WLAN / Bluetooth, 2.4 / 3.5 GHz WiMAX

• Output stage LNA for active antennas

• TV, GPS, SDARS

• 2.4 / 5 GHz WLAN

• 2.4 / 3.5 / 5 GHz WiMAX etc.

• Suitable for 5 - 10.5 GHz oscillators

• For medium power amplifiers and driver stages



Key Features of NPN Silicon Germanium RF Transistor

• High OIP3 and P-1dB
• Ideal for low phase noise oscillators
• Maximum available Gain Gma = 21.5 dB at 1.8 GHz
• Noise figure F = 0.8 dB at 1.8 GHz
• 70 GHz fT- Silicon Germanium technology