Product Profile of NPN Heterojunction Wideband Bipolar RF Transistor
NPN Heterojunction Wideband Bipolar RF Transistor is designed in such a way that supports collector voltages up to 4.2 V. The Bipolar RF Transistor is fitted with internal protection circuits, which enhance robustness against ESD and high RF input power strongly. NPN Heterojunction Wideband Bipolar RF Transistor is suitable for portable battery-powered applications in which reduced power consumption is a key requirement. NPN Heterojunction Wideband Bipolar RF Transistor is ideal for ISM applications like RKE, AMR and Zigbee, as well as for emerging wireless applications.
Applications of NPN Heterojunction Wideband Bipolar RF Transistor:
- Mobile, portable and fixed connectivity applications: WLAN 802.11a/b/g/n, WiMax 2.5 / 3.5 / 5GHz, UWB, Bluetooth
- Satellite communication systems: Navigation systems [GPS, Glonass], satellite radio [SDARs, DAB] and C-band LNB
- Multimedia applications such as mobile/portable TV, CATV, FM radio
- 3G/4G UMTS/LTE mobile phone applications
- ISM applications like RKE, AMR and Zigbee, as well as for emerging wireless applications. As discrete active mixer, amplifier in VCOs and buffer amplifier
Key Features of NPN Heterojunction Wideband Bipolar RF Transistor
- Fitted with internal protection circuits, which enhance robustness against ESD and high RF input power strongly
- Robust construction
- With high RF gain and lowest noise figure at low operation current for use in a wide range of wireless applications
- Suited for portable battery-powered applications in which reduced power consumption is a key requirement
- Device design supports collector voltages up to 4.2 V
- High maximum RF input power of 21 dBm
- 26 dB maximum gain (Gms) typical at 2.4 GHz, 22 dB at 5.5 GHz, 15 mA
- 21 dBm OIP3 typical at 5.5 GHz, 15 mA
