Product Profile of Low Noise Broadband Pre-Matched Bipolar RF Transistor
Low Noise Broadband Pre-Matched Bipolar RF Transistor is used in dedicated short range communication systems. The Bipolar RF Transistor consumes low amount of power during operation which makes it suitable for mobile applications. The Bipolar RF Transistor is ideal for broadband amplifiers and satellite navigation systems. Low Noise Broadband Pre-Matched Bipolar RF Transistor is based on Infineon´s reliable, high volume SiGe:C bipolar technology.
Applications of Low Noise Broadband Pre-Matched Bipolar RF Transistor:
- Wireless Communications: WLAN IEEE802.11b,g,n,a,ac single- and dual band applications, broadband LTE or WiMAX LNA
- Satellite navigation systems [such as GPS, GLONASS, COMPASS] and satellite C-band LNB [1st and 2nd stage LNA]
- Broadband amplifiers: Dualband WLAN, multiband mobile phone, UWB up to 10 GHz
- Dedicated short range communication [DSRC] systems: WLAN IEEE802.11p
Key Features of Low Noise Broadband Pre-Matched Bipolar RF Transistor
- Low noise broadband NPN RF transistor based on Infineon´s reliable, high volume SiGe:C bipolar technology
- High maximum RF input power and ESD robustness 20 dBm maximum RF input power, 1.5 KV HBM ESD hardness
- Unique combination of high RF performance, robustness and ease of application circuit design
- Low noise figure: NFmin = 0.95 dB at 2.4 GHz and 1.1 dB at 5.5 GHz, 1.8 V, 8 mA
- High gain |S21|2 = 21.5 dB at 2.4 GHz and 16.5 dB at 5.5 GHz, 1.8 V, 15 mA
- Ideal for low voltage applications such as VCC = 1.2 V and 1.8 V
- Low power consumption, ideal for mobile applications
