Product Profile of Low Noise Bipolar RF Transistor
Low Noise Bipolar RF Transistor finds application in broadband amplifiers including Dualband WLAN, multiband mobile phone, UWB up to 10 GHz ISM bands up to 10 GHz. The Bipolar RF Transistor is a low noise broadband NPN RF transistor which is based on Infineon´s reliable, high volume SiGe:C bipolar technology. The Bipolar RF Transistor consumes low amount of power during operation which makes it suitable for mobile applications. Low Noise Bipolar RF Transistor finds application in dedicated short range communication systems.
Applications of Low Noise Bipolar RF Transistor:
- Wireless Communications: WLAN IEEE802.11b,g,n,a,ac single- and dual band applications, broadband LTE or WiMAX LNA
- Satellite navigation systems [such asGPS, GLONASS, COMPASS...] and satellite C-band LNB [1st and 2nd stage LNA]
- Broadband amplifiers: Dualband WLAN, multiband mobile phone, UWB up to 10 GHz
- Dedicated short range communication [DSRC] systems
Key Features of Low Noise Bipolar RF Transistor
- Low noise broadband NPN RF transistor based on Infineon´s reliable, high volume SiGe:C bipolar technology
- High maximum RF input power and ESD robustness 20 dBm maximum RF input power, 1.5 KV HBM ESD hardness
- Unique combination of high RF performance, robustness and ease of application circuit design
- Low noise figure: NFmin = 0.95 dB at 2.4 GHz and 1.05 dB at 5.5 GHz, 1.8 V, 8 mA
- High gain |S21|2 = 21.5 dB at 2.4 GHz and 16.5 dB at 5.5 GHz, 1.8 V, 15 mA
- Ideal for low voltage applications
- Low power consumption, ideal for mobile applications
