Product Profile of Low Noise Bipolar Radio Frequency Transistor
Low Noise Bipolar Radio Frequency Transistor is useful for wireless communications and satellite navigation systems. The Radio Frequency Transistor is based on Infineon´s reliable, high volume SiGe:C bipolar technology. The Bipolar Radio Frequency Transistor consumes low amount of power during operation which makes it suitable for mobile applications. Low Noise Bipolar Radio Frequency Transistor has a robust construction and is apt for Broadband amplifiers and dedicated short range communication system.
Applications of Low Noise Bipolar Radio Frequency Transistor:
- Works as low noise amplifier
- Wireless Communications: WLAN IEEE802.11b,g,n,a,ac single- and dual band applications, broadband LTE or WiMAX LNA
- Satellite navigation systems [such as GPS, GLONASS, COMPASS] and satellite C-band LNB [1st and 2nd stage LNA]
- Broadband amplifiers: Dualband WLAN, multiband mobile phone, UWB up to 10 GHz
- Dedicated short range communication [DSRC] system: WLAN IEEE802.11p
Key Features of Low Noise Bipolar Radio Frequency Transistor
- Low noise broadband NPN RF transistor based on Infineon´s reliable, high volume SiGe:C bipolar technology
- High maximum RF input power and ESD robustness 20 dBm maximum RF input power, 1.5 KV HBM ESD hardness
- High RF performance
- Robust construction
- Ease of application circuit design
- Low noise figure: NFmin = 1.0 dB at 2.4 GHz and 1.2 dB at 5.5 GHz, 1.8 V, 8 mA
- Ideal for low voltage applications such as VCC = 1.2 V and 1.8 V (2.85 V, 3.3 V, 3.6 V requires corresponding collector resistor)
- Low power consumption, ideal for mobile applications
