Product Profile of High Gain Low Noise Radio Frequency Transistor

High Gain Low Noise Radio Frequency Transistor provides optimum performance for a wide range of wireless applications up to 10 GHz. The Radio Frequency Transistor is ideal for WLAN and all 5-6 GHz applications. The Radio Frequency Transistor utilises 150 GHz fT-silicon germanium technology. High Gain Low Noise Radio Frequency Transistor is suitable for 5 - 10.5 GHz oscillators.

Applications of High Gain Low Noise Radio Frequency Transistor:

• Driver amplifier

• ISM bands 434 and 868 MHz

• 1.9 GHz cordless phones

• CATV LNA

• Transmitter driver amplifier

• 2.4 GHz WLAN / Bluetooth, 2.4 / 3.5 GHz WiMAX

• Output stage LNA for active antennas

• TV, GPS, SDARS

• 2.4 / 5 GHz WLAN

• 2.4 / 3.5 / 5 GHz WiMAX etc.

• Suitable for 5 - 10.5 GHz oscillators



Key Features of High Gain Low Noise Radio Frequency Transistor

• High gain ultra low noise RF transistor
• Provides optimum performance for a wide range of wireless applications up to 10 GHz
• Ideal for WLAN and all 5-6 GHz applications
• High OIP3 and P-1dB for driver stages
• High maximum stable and available gain Gms = 21 dB at 1.8 GHz, Gma = 11.5 dB at 6 GHz
• 150 GHz fT-silicon germanium technology
• Small and flat leadless package, reduced height 0.32 mm maximum