Product Profile of Heterojunction Wideband Rf Bipolar Transistor

Heterojunction Wideband RF Bipolar Transistor is ideal for highly linear low noise driver amplifier for all RF front ends up to 5.5 GHz. The RF Bipolar Transistor is suitable for 1.9 GHz cordless phones. The Heterojunction Wideband RF Bipolar Transistor is apt for 5 - 10.5 GHz oscillators. Heterojunction Wideband RF Bipolar Transistor is based on Infineon´s reliable, high volume SiGe:C wafer technology.

Applications of Heterojunction Wideband RF Bipolar Transistor:

• Driver amplifier

• ISM bands 434 and 868 MHz

• 1.9 GHz cordless phones

• CATV LNA

• Transmitter driver amplifier

• 2.4 GHz WLAN / Bluetooth, 2.4 / 3.5 GHz WiMAX

• Output stage LNA for active antennas

• TV, GPS, SDARS

• 2.4 / 5 GHz WLAN

• 2.4 / 3.5 / 5 GHz WiMAX etc.

• Suitable for 5 - 10.5 GHz oscillators



Key Features of Heterojunction Wideband Rf Bipolar Transistor

• Highly linear low noise driver amplifier for all RF front ends up to 5.5 GHz
• Output compression point OP1dB = 16 dBm at 60 mA, 3 V, 3.5 GHz, 50 Ω system
• Output 3rd order intermodulation point OIP3 = 28.5 dBm at 60 mA, 3 V, 3.5 GHz, 50 Ωsystem
• Maximum gain Gms = 19 dB at 60 mA, 3 V, 3.5 GHz
• Minimum noise figure NFmin = 1.15 dB at 30 mA, 3 V, 3.5 GHz
• Based on Infineon´s reliable, high volume SiGe:C wafer technology
• Easy to use Pb-free (RoHS compliant) standard package with visible leads