Product Profile of Heterojunction Bipolar Transistor for WiFi Applications
Heterojunction Bipolar Transistor for WiFi Applications is based upon the reliable high volume SiGe:C technology of Infineon. The Bipolar Transistor is specifically designed for 5-6 GHz WiFi applications. The Bipolar Transistor provides inherently good input and output power match as well as inherently good noise match at 5-6 GHz. Heterojunction Bipolar Transistor for WiFi Applications is well-suited for portable battery powered applications in which energy efficiency is a key requirement.
Applications of Heterojunction Bipolar Transistor for WiFi Applications:
- As Low Noise Amplifier [LNA] in mobile, portable and fixed connectivity applications: WLAN 802.11a/b/g/n, WiMax 2.5/3.5/5 GHz, UWB, Bluetooth
- Satellite communication systems: Navigation systems [GPS, Glonass], satellite radio [SDARs, DAB] and C-band LNB
- Multimedia applications such as mobile/portable TV, CATV, FM Radio
- As discrete active mixer, amplifier in VCOs and buffer amplifier
Key Features of Heterojunction Bipolar Transistor for WiFi Applications
- Robust high performance low noise amplifier based on Infineon´s reliable, high volume SiGe:C wafer technology
- 2 kV ESD robustness (HBM) due to integrated protection circuits
- High maximum RF input power of 21 dBm
- 0.6 dB minimum noise figure typical at 2.4 GHz, 0.8 dB at 5.5 GHz, 6 mA
- 26 dB maximum gain (Gma, Gms) typical at 2.4 GHz, 20.5 dB at 5.5 GHz, 25 mA
- Based upon the reliable high volume SiGe:C technology of Infineon
- Specifically designed for 5-6 GHz WiFi applications
- Provides inherently good input and output power match as well as inherently good noise match at 5-6 GHz
- Suited for portable battery powered applications in which energy efficiency is a key requirement
