Product Profile of Bipolar RF Transistor with Internal Protection Circuits
Bipolar RF Transistor with Internal Protection Circuits is suitable for portable battery-powered applications in which reduced power consumption is a key requirement. The Bipolar RF Transistor is designed in such a way that supports collector voltages up to 4.2 V. The RF Transistor is a silicon germanium carbon npn heterojunction wideband bipolar RF transistor is apt for multimedia applications such as mobile or portable TV, CATV, FM radio. Bipolar RF Transistor with Internal Protection Circuits is also suitable for ISM applications like RKE, AMR and Zigbee, as well as for emerging wireless applications.
Applications of Bipolar RF Transistor with Internal Protection Circuits:
- Mobile, portable and fixed connectivity applications: WLAN 802.11a/b/g/n, WiMax 2.5/3.5/5 GHz, UWB, Bluetooth
- Satellite communication systems: Navigation [GPS, Glonass], satellite radio [SDARs, DAB] and LNB
- 3G/4G UMTS/LTE mobile phone applications
- Multimedia applications such as mobile/portable TV, CATV, FM Radio
- ISM applications like RKE, AMR and Zigbee, as well as for emerging wireless applications. As discrete active mixer, amplifier in VCO`s and buffer amplifier
Key Features of Bipolar RF Transistor with Internal Protection Circuits
- Robust high performance low noise amplifier based on Infineon´s reliable, high volume SiGe:C wafer technology
- 2 kV ESD robustness (HBM) due to integrated protection circuits
- High maximum RF input power of 21 dBm
- 0.65 dB minimum noise figure typical at 2.4 GHz, 0.9 dB at 5.5 GHz, 5 mA
- 26 dB maximum gain (Gma, Gms) typical at 2.4 GHz, 19.5 dB at 5.5 GHz, 15 Ma
- 22 dBm OIP3 typical at 5.5 GHz, 15 mA
