Product Profile of Bipolar RF Transistor for Wireless Applications
Bipolar RF Transistor for Wireless Applications is fitted with internal protection circuits, which enhance robustness against ESD and high RF input power strongly. The Bipolar RF Transistor is well-suited for portable battery-powered applications in which reduced power consumption is a key requirement. Bipolar RF Transistor is ideal for mobile, portable and fixed connectivity applications. Bipolar RF Transistor for Wireless Applications is apt for satellite communication systems and multimedia applications such as mobile/portable TV, CATV, FM radio and 3G/4G UMTS/LTE mobile phone applications.
Applications of Bipolar RF Transistor for Wireless Applications:
- Works as low noise amplifier
- Mobile, portable and fixed connectivity applications: WLAN 802.11a/b/g/n, WiMax 2.5 / 3.5 / 5GHz, UWB, Bluetooth
- Satellite communication systems: Navigation systems [GPS, Glonass], satellite radio [SDARs, DAB] and C-band LNB
- Multimedia applications such as mobile/portable TV, CATV, FM radio
- 3G/4G UMTS/LTE mobile phone applications
- ISM applications like RKE, AMR and Zigbee, as well as for emerging wireless applications. As discrete active mixer, amplifier in VCOs and buffer amplifier
Key Features of Bipolar RF Transistor for Wireless Applications
- Silicon Germanium Carbon NPN Heterojunction wideband Bipolar RF Transistor
- Fitted with internal protection circuits, which enhance robustness against ESD and high RF input power strongly
- Robust high performance low noise amplifier based on Infineon´s reliable, high volume SiGe:C wafer technology
- 2 kV ESD robustness (HBM) due to integrated protection circuits
- High maximum RF input power of 21 dBm
- 0.65 dB minimum noise figure typical at 2.4 GHz, 0.9 dB at 5.5 GHz, 6 mA
- 25.5 dB maximum gain (Gma, Gms) typical at 2.4 GHz, 18.5 dB at 5.5 GHz, 25 mA
