Product Profile of Wideband Bipolar Radio Frequency Transistor
Wideband Bipolar Radio Frequency Transistor is fitted with internal protection circuits, which enhance robustness against ESD and high RF input power strongly. The Bipolar Radio Frequency Transistor is especially well-suited for portable battery-powered applications in which reduced power consumption is a key requirement. The Bipolar Radio Frequency Transistor is designed in such a way that supports collector voltages up to 4.2 V. Wideband Bipolar Radio Frequency Transistor is fitted with integrated protection circuits that ensure 2 kV ESD robustness.
Applications of Wideband Bipolar Radio Frequency Transistor:
- Mobile, portable and fixed connectivity applications: WLAN 802.11a/b/g/n, WiMax 2.5/3.5/5 GHz, UWB, Bluetooth
- Satellite communication systems: Navigation systems [GPS, Glonass], satellite radio [SDARs, DAB] and C-band LNB
- Multimedia applications such as mobile/portable TV, CATV, FM Radio
- 3G/4G UMTS/LTE mobile phone applications
- ISM applications like RKE, AMR and Zigbee, as well as for emerging wireless applications. As discrete active mixer, amplifier in VCOs and buffer amplifier
Key Features of Wideband Bipolar Radio Frequency Transistor
- Fitted with internal protection circuits, which enhance robustness against ESD and high RF input power strongly
- Suited for portable battery-powered applications in which reduced power consumption is a key requirement
- Designed in such a way that supports collector voltages up to 4.2 V
- Robust high performance low noise amplifier based on Infineon´s reliable, high volume SiGe:C wafer technology
- 2 kV ESD robustness (HBM) due to integrated protection circuits
- High maximum RF input power of 21 dBm
- 0.6 dB minimum noise figure typical at 2.4 GHz, 0.8 dB at 5.5 GHz, 6 mA
- 26 dB maximum gain (Gma, Gms) typical at 2.4 GHz, 20.5 dB at 5.5 GHz, 25 mA
