Product Profile of Heterojunction Bipolar Transistor for LNA Applications
Heterojunction Bipolar Transistor for LNA Applications provides inherently good input power match as well as inherently good noise match between 2.3 and 3.5 GHz. The Bipolar Transistor is especially well-suited for portable batterypowered applications in which energy efficiency is a key requirement. The Heterojunction Bipolar Transistor is a robust low noise amplifier based on Infineon´s reliable, high volume SiGe:C technology.
Heterojunction Bipolar Transistor for LNA Applications can be used as discrete active mixer, buffer amplifier in VCOs.
Applications of Heterojunction Bipolar Transistor for LNA Applications:
- Works as very low noise amplifier [LNA] in mobile and fixed connectivity applications: WLAN 802.11b/g/n, WiMAX 2.5/3.5 GHz, Bluetooth
- Satellite communication systems: GNSS Navigation systems [GPS, GLONASS, COMPASS/Beidu/Galileo], Satellite radio [SDARs, DAB and C-band LNB] and C-band LNB [1st and 2nd stage LNA]
- Multimedia applications such as mobile/portable TV, Mobile TV, FM Radio
- 3G/4G UMTS/LTE mobile phone applications
- ISM applications like RKE, AMR and Zigbee
- As discrete active mixer, buffer amplifier in VCOs
Key Features of Heterojunction Bipolar Transistor for LNA Applications
- Robust very low noise amplifier based on Infineon´s reliable, high volume SiGe:C technology
- Unique combination of high end RF performance and robustness: 16 dBm maximum RF input power, 1 kV HBM ESD hardness
- High linearity OIP3 = 25.5 dBm at 3.5 GHz, 2.5 V, 15 mA
- High transition frequency fT = 60 GHz enables very low noise figure at high frequencies: NFmin = 0.65 dB at 3.5 GHz, 2.5 V, 5 Ma
- Transducer gain |S21|2 = 16 dB at 3.5 GHz, 2.5 V, 15 mA
- Ideal for low voltage applications such as VCC = 1.8 V and 2.85 V (3.3 V, 3.6 V requires corresponding collector resistor)
- Low power consumption, ideal for mobile applications
