Product Profile of Discrete Hetero-Junction Bipolar Transistor

Discrete Hetero-Junction Bipolar Transistor is a series of discrete hetero-junction bipolar transistors, specifically designed for high performance 5 GHz band low noise amplifier solutions for Wi-Fi connectivity applications. The Bipolar Transistor achieves highest gain of 18dB and noise figure level of 0.95dB with only 8 external passives. The Hetero-Junction Bipolar Transistor finds application in routers and Wi-Fi modules. Discrete Hetero-Junction Bipolar Transistor is extensively used in abundant distribution channels and sales offices.

Applications of Discrete Hetero-Junction Bipolar Transistor:

• Abundant Distribution channels and sales offices

• Target Applications:

• 5-6 GHz low noise amplifier [LNA]

• Wi-Fi 802.11 a/n/ac standards

• Wi-Fi access point [AP]

• Routers

• Wi-Fi modules



Key Features of Discrete Hetero-Junction Bipolar Transistor

• Bipolar Transistor is a series of discrete hetero-junction bipolar transistors (HBT) specifically designed for high performance 5 GHz band low noise amplifier (LNA) solutions for Wi-Fi connectivity applications
• High transition frequency f T = 80 GHz
• Achieves highest gain of 18dB and noise figure level of 0.95dB with only 8 external passives
• Low voltage supply capability such as VCC = 1.2 V and 1.8 V
• 1.5 kV HBM ESD hardness
• High maximum RF input power
• Low power consumption, ideal for mobile applications
• Inherently matched in the 5 GHz band